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Posts Tagged ‘Integrated circuit’

in the development of current technology, what is needed is an improvised tool / device. To obtain high-quality material in terms of both electrical, then the analysis of nano holds an important role. When we analyze the materials in nano size, then we will see how the distribution of electrons as seen from the images obtained by Image can be obtained using tools such as STEM / TEM, FESEM, High Resolotion TEM, SEM, and AFM to look at the morphology of the material in size nanoscale. Scientists Physics including scientists in the field of electronic materials and is currently trying to create materials to produce a material useful in optoelectronic industry. Sure is essentially a semiconductor technology that has been long known as semiconductors Si, GaAs, GaN semiconductor ingredients are warm-warm developed is based on GaAsN alloy and ZnO. During its development, semiconductor technology capable of producing diodes and transistors even the more complex the integrated circuit (IC) which developed into the microprocessor. Equipment / Devices was very instrumental in the discovery of computers, cellphones, and more advanced and will have developed a microprocessor-based device that is composed of a variety of electronic functions in a single semiconductor integrated (single semiconducting integrated circuit).

Nanoscale analysis plays an important enough to mengimprove methods used today. The analysis is not only used by experimentalists, but also incorporated in the theoretical physics research group incompressible substance or Condensed Matter Physics (CMP). They use physics equations (Schrodinger equation, bandstructure, Bloch wave functions, Nearly free electron model, and density functional theory) are able to predict the energy bands that can be generated by the desired material.

Intelligent materials

From the above description shows that although the development of today’s semiconductor devices are very fast, some barriers have started to appear. The question that arises is whether efforts to improve of semiconductor devices can continue with the current pattern or to look for another pattern. Current pattern is that in IC technology, the transistor as the basic active device has only one function only and then converted into work a lot with the help of circuit design and software. With growing demand for creating an increasingly complex integrated circuits, load the software design will be more severe, so chances are difficult to realize. To that end, from the hardware, the business must be done to help ease the burden. One proposal is to create a multifunction device so that the devices become more adaptive. Such devices can be realized by using so-called intelligent materials. IC made ??of adaptive devices like this will be  without burdening the design of increasingly complex software.

One of the barriers of silicon technology is the electrical properties associated with the low charge carrier mobility of silicon material is. Mobility is a parameter that states the rate of charge carriers in semiconductors when given electric field. To make high-speed devices, gallium arsenide (GaAs) and guidance materials have been considered as a replacement for silicon material. In addition to electron devices, these materials are also used photonic devices / lasers and microwave devices (microwave device). GaAs is a semiconductor material of group III-V which has an electron mobility of about six times higher than silicon at room temperature. This material type direct energy gap. By utilizing these advantages, has successfully made transistors called high electron mobility transistor (HEMT), following the first transistors that GaAs technology is popular for metal semiconductor field effect transistors (MESFET). Of the HEMT structure is similar to the MOSFET, but by using the modulation doping technique, in which electrons can be separated from the ion pengotornya and moving in two-dimensional potential well (2DEG) at high speed. The development of ICs with GaAs-based material is also currently busy investigated. A few years ago has successfully created 64 kb static random access memory (SRAM) for high-speed 2ns using 0.6 micron sized HEMT technology. Other high-speed transistors that are being developed is a heterojunction bipolar transistor (HBT). The structure of this is the connection npn transistor in which emitter using a material with energy gap larger than the base and collector. In these conditions, the expected resistance from the base and the capacitance of the base-emitter connection will be reduced so as to obtain the maximum frequency of oscillation (fmaks) high. We have already made fmaks HBT with 200 GHz. Although much progress has been achieved, many people doubted the ability of GaAs technology is to be able to compete with silicon technology in the order of 0.1 microns or smaller. That is why, many semiconductor companies primarily in the United States who do not consider this technology as a replacement for silicon GaAs.

In other words, hard silicon emit light. This property causes the silicon devices are not suitable as photonic / optoelectronic, so it is also possible for example to make the IC in which are optoelectronic detector or a light source pemamcar using only the silicon material alone. Several attempts have been made ??to overcome this, among others, by developing what is known as band gap engineering. One example is to grow the material structure of SiGe / Si superlattice layer straitned. Parameters of mechanical strains arising due to differences between the crystal lattice constant of SiGe and Si layers will affect the electronic structure of materials at the top so that it appears brillioun-zone folding effects that alter the structure of ribbon-like material with a direct energy gap (direct band gap). The combination of both materials allows the transmission and absorption of light. Another popular way to improve the optical properties of silicon is the so-called porous silicon material. By dissolving electrochemically, on a silicon plate can be shaped holes measuring tens of angstroms. With the help of a laser beam, will be seen with the naked eye from the light transmitting material is silicon. This phenomenon can be explained using a model of two-dimensional quantum confinement. The drawback of this technique is the nature of its low reproducibility. Progress on opening a new era for silicone materials and guidelines to be applied to the device optoelektronika.

The ability to master high-tech is a prerequisite for a country to enter the newly industrialized countries. One area of ??high technology that greatly affect human civilization in this century is the semiconductor technology and microelectronics. This field is usually analogous to the three English words that affect modern life is the Computer, Component and communication. For computers, the main topics in this field is how to make computers become faster, leaner with more complex functions and power consumption are vanishingly small. To that end, there are two approaches support each other in terms of the hardware and software. In terms of hardware is how to create the smallest transistor as the active component becomes smaller and high speed. In terms of software is how to design an integrated circuit (integrated circuit) that the more complex become more sleek and compact. Article below discusses the approach in terms of hardware devices, namely the development of electron devices (electron devices) present and future as a basic component of semiconductor equipment / electronics, with a review from the point of the semiconductor material itself.

Silicon Technology

A discussion of semiconductor devices certainly can not be separated from the semiconductor material itself as the manufacture of these devices. Silicon (Si) with an abundant supply on earth and with the manufacture of crystal technology that has been established, has become the choice of semiconductor technology. Silicon very large scale integration (VLSI) has opened a new era in the world of electronics in the 20th century this. The need for higher speed and better performance of computers has been pushed into silicon VLSI silicon technology ultra high scale integration (ULSI). Currently metaloxide semiconductor field effect transistors (MOSFETs) are still dominant as device technology base integrated circuit (IC). The dimensions of the MOSFET becomes smaller and would be about 0.1 microns to the size of the giga-bit dynamic random acces memories (DRAMs). Some of the problems that arise in an attempt to reduce the dimensions of the MOSFET including short channel effects and hot carrier that will reduce the performance of the transistor itself.