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Posts Tagged ‘Semiconductor’

Today, great attention is also given to low-dimensional semiconductor structures (low-dimensional semiconductor) such as quantum well (2D), quantum wire (1D) and quantum dot (0D). Such structures are opening the way to the era of nanotechnology and the fabrication of quantum devices (quantum devices). It is known that when electrons are confined in a potential region with dimensions equal to the wavelength then it will show the wave nature of electrons and other quantum phenomena will be observed. Some quantum phenomena can reduce the performance of the device itself, while other phenomena that could spur the creation of a new quantum devices. Some devices such as quantum-wire transistors, single-electron transistor has been successfully established and demonstrated a high speed. The problems that arise from the devices are made based on low-dimensional semiconductor structures is a low drive currents so it is still difficult to apply. In general, the problems facing this quantum device is operating its work remains to be done at low temperatures (such as liquid helium temperatures: 4.2 K) so that quantum phenomena can be observed clearly. This will certainly raise the cost of manufacture, so not attractive to produce.

in the development of current technology, what is needed is an improvised tool / device. To obtain high-quality material in terms of both electrical, then the analysis of nano holds an important role. When we analyze the materials in nano size, then we will see how the distribution of electrons as seen from the images obtained by Image can be obtained using tools such as STEM / TEM, FESEM, High Resolotion TEM, SEM, and AFM to look at the morphology of the material in size nanoscale. Scientists Physics including scientists in the field of electronic materials and is currently trying to create materials to produce a material useful in optoelectronic industry. Sure is essentially a semiconductor technology that has been long known as semiconductors Si, GaAs, GaN semiconductor ingredients are warm-warm developed is based on GaAsN alloy and ZnO. During its development, semiconductor technology capable of producing diodes and transistors even the more complex the integrated circuit (IC) which developed into the microprocessor. Equipment / Devices was very instrumental in the discovery of computers, cellphones, and more advanced and will have developed a microprocessor-based device that is composed of a variety of electronic functions in a single semiconductor integrated (single semiconducting integrated circuit).

Nanoscale analysis plays an important enough to mengimprove methods used today. The analysis is not only used by experimentalists, but also incorporated in the theoretical physics research group incompressible substance or Condensed Matter Physics (CMP). They use physics equations (Schrodinger equation, bandstructure, Bloch wave functions, Nearly free electron model, and density functional theory) are able to predict the energy bands that can be generated by the desired material.

Challenges in Indonesia

So it appears that semiconductor technology has changed rapidly by exploiting physical phenomena that were previously only written in a semiconductor or solid tex book only. This is possible because of progress in the development of equipment grower in the form of thin film materials. It is also matched by advances in device fabrication techniques and production processes. As a high technology, semiconductor technology is currently only centered in the industrialized countries and newly industrialized countries because it requires a huge research costs and many experts. For Indonesia, the best thing to do is as soon as possible involved in this technology so it is not far behind. Development priorities should be determined without having to follow the lead of countries that had already advanced with this technology. It certainly must be associated with competition opportunities that remain. Newly industrialized countries in Asia have shown that there is always a chance that can be taken. One concrete step is urgent now is to multiply the experts who master this technology so as to form a semiconductor community can work together.

Intelligent materials

From the above description shows that although the development of today’s semiconductor devices are very fast, some barriers have started to appear. The question that arises is whether efforts to improve of semiconductor devices can continue with the current pattern or to look for another pattern. Current pattern is that in IC technology, the transistor as the basic active device has only one function only and then converted into work a lot with the help of circuit design and software. With growing demand for creating an increasingly complex integrated circuits, load the software design will be more severe, so chances are difficult to realize. To that end, from the hardware, the business must be done to help ease the burden. One proposal is to create a multifunction device so that the devices become more adaptive. Such devices can be realized by using so-called intelligent materials. IC made ??of adaptive devices like this will be  without burdening the design of increasingly complex software.

One of the barriers of silicon technology is the electrical properties associated with the low charge carrier mobility of silicon material is. Mobility is a parameter that states the rate of charge carriers in semiconductors when given electric field. To make high-speed devices, gallium arsenide (GaAs) and guidance materials have been considered as a replacement for silicon material. In addition to electron devices, these materials are also used photonic devices / lasers and microwave devices (microwave device). GaAs is a semiconductor material of group III-V which has an electron mobility of about six times higher than silicon at room temperature. This material type direct energy gap. By utilizing these advantages, has successfully made transistors called high electron mobility transistor (HEMT), following the first transistors that GaAs technology is popular for metal semiconductor field effect transistors (MESFET). Of the HEMT structure is similar to the MOSFET, but by using the modulation doping technique, in which electrons can be separated from the ion pengotornya and moving in two-dimensional potential well (2DEG) at high speed. The development of ICs with GaAs-based material is also currently busy investigated. A few years ago has successfully created 64 kb static random access memory (SRAM) for high-speed 2ns using 0.6 micron sized HEMT technology. Other high-speed transistors that are being developed is a heterojunction bipolar transistor (HBT). The structure of this is the connection npn transistor in which emitter using a material with energy gap larger than the base and collector. In these conditions, the expected resistance from the base and the capacitance of the base-emitter connection will be reduced so as to obtain the maximum frequency of oscillation (fmaks) high. We have already made fmaks HBT with 200 GHz. Although much progress has been achieved, many people doubted the ability of GaAs technology is to be able to compete with silicon technology in the order of 0.1 microns or smaller. That is why, many semiconductor companies primarily in the United States who do not consider this technology as a replacement for silicon GaAs.

In other words, hard silicon emit light. This property causes the silicon devices are not suitable as photonic / optoelectronic, so it is also possible for example to make the IC in which are optoelectronic detector or a light source pemamcar using only the silicon material alone. Several attempts have been made ??to overcome this, among others, by developing what is known as band gap engineering. One example is to grow the material structure of SiGe / Si superlattice layer straitned. Parameters of mechanical strains arising due to differences between the crystal lattice constant of SiGe and Si layers will affect the electronic structure of materials at the top so that it appears brillioun-zone folding effects that alter the structure of ribbon-like material with a direct energy gap (direct band gap). The combination of both materials allows the transmission and absorption of light. Another popular way to improve the optical properties of silicon is the so-called porous silicon material. By dissolving electrochemically, on a silicon plate can be shaped holes measuring tens of angstroms. With the help of a laser beam, will be seen with the naked eye from the light transmitting material is silicon. This phenomenon can be explained using a model of two-dimensional quantum confinement. The drawback of this technique is the nature of its low reproducibility. Progress on opening a new era for silicone materials and guidelines to be applied to the device optoelektronika.

Although much progress has been achieved, the question that always arises is how far the limit of the downsizing that can be done in terms of the production process, physical properties of the device itself and the Interconnecting. Many problems in terms of fabrication which can become an obstacle. As one example of the limitations of the production process is the technique of lithography techniques necessary to realize the circuit design onto a plate (waver) in silicon IC fabrication process. By using light as a source file, the dimensions of the lithography by itself will be limited by the wavelength of light itself. Therefore, other lithography techniques developed using X-rays and electron beams. By using these two techniques is not very economical for use in IC production process in bulk. From the above, apparently still there are some problems that will arise in the process of IC fabrication in the future.

Silicon-based technology

As is known, in terms of elektronik structure, semiconductor materials can be divided into two kinds, which have a direct energy band gap (direct band gap) and the band gap (indirect band gap). Silicon is the material with an indirect energy gap, where the minimum value of the conduction band and valence band maximum of one price is not met at the same momentum. This meant that occur excitation and recombination of the charge necessary to bring major changes in the value of its momentum.

The ability to master high-tech is a prerequisite for a country to enter the newly industrialized countries. One area of ??high technology that greatly affect human civilization in this century is the semiconductor technology and microelectronics. This field is usually analogous to the three English words that affect modern life is the Computer, Component and communication. For computers, the main topics in this field is how to make computers become faster, leaner with more complex functions and power consumption are vanishingly small. To that end, there are two approaches support each other in terms of the hardware and software. In terms of hardware is how to create the smallest transistor as the active component becomes smaller and high speed. In terms of software is how to design an integrated circuit (integrated circuit) that the more complex become more sleek and compact. Article below discusses the approach in terms of hardware devices, namely the development of electron devices (electron devices) present and future as a basic component of semiconductor equipment / electronics, with a review from the point of the semiconductor material itself.

Silicon Technology

A discussion of semiconductor devices certainly can not be separated from the semiconductor material itself as the manufacture of these devices. Silicon (Si) with an abundant supply on earth and with the manufacture of crystal technology that has been established, has become the choice of semiconductor technology. Silicon very large scale integration (VLSI) has opened a new era in the world of electronics in the 20th century this. The need for higher speed and better performance of computers has been pushed into silicon VLSI silicon technology ultra high scale integration (ULSI). Currently metaloxide semiconductor field effect transistors (MOSFETs) are still dominant as device technology base integrated circuit (IC). The dimensions of the MOSFET becomes smaller and would be about 0.1 microns to the size of the giga-bit dynamic random acces memories (DRAMs). Some of the problems that arise in an attempt to reduce the dimensions of the MOSFET including short channel effects and hot carrier that will reduce the performance of the transistor itself.